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fluoroalkane Inorganic_Compound PANI C_AFM contact SiWafer dielectric_trench light_emission Galfenol Conductivity CopperFoil Defects TungstenDeposition MagneticForceMicroscopy MechanicalProperty BCZT C60H122 Wildtype MfmAmplitude Hydroxyapatite EPFL Chemical Vapor Deposition MfmPhase Tungsten Jason heterojunctions ShenYang Modulus Cell GlassTemp CaMnO3 PatternedSapphireSubstrat SRAM NUS_Physics Granada
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Trench Etch Profile on Si Wafer
Top dielectric trench etch profile on Si wafer having tapered slope at the trench sidewall.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 3μm×3μm
- Scan Rate: 0.21Hz
- Pixel: 1024 × 256
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 3μm×3μm
- Scan Rate: 0.21Hz
- Pixel: 1024 × 256