-
Display Trench CarbonNanotube AlkaneFilm I-VSpectroscopy Solar Pore KAIST Lanthanum_aluminate Tape Conductivity ThinFilm LiBattery PVAC SThM Device Reduction Ni-FeAlloy PetruPoni Sidewall Polydimethylsiloxane semifluorinated_alkane CopperFoil Strontium HighAspect Morphology MoirePattern Polyethylene Led Floppy StainlessSteel AdhesionEnergy Hydroxyapatite LateralPFM Array
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Christmas Ball Lithography on Si
Create oxidation layers on bare Si surface using bias mode of lithography.
Scanning Conditions
- System: NX10
- Scan Mode: Lithography
- Cantilever: AD-40-SS (k=40N/m, f=200kHz)
- Scan Size: 40μm×40μm
- Scan Rate: 0.5Hz
- Pixel Size: 1024 × 1024
- Tip Bias: -10V for patterened area
- Scan Mode: Lithography
- Cantilever: AD-40-SS (k=40N/m, f=200kHz)
- Scan Size: 40μm×40μm
- Scan Rate: 0.5Hz
- Pixel Size: 1024 × 1024
- Tip Bias: -10V for patterened area