-
Worcester_Polytechnic_Institute ScanningThermalMicroscopy multi_layer University_of_Regensburg Vacuum IndiumTinOxide C_AFM Ca10(PO4)6(OH)2 IcelandSpar Force-distance Hexatriacontane MolybdenumDisulfide HDD Neodymium Bacterium Nanostructure align KevlarFiber MoirePattern Protein MfmPhase Collagen Battery InorganicCompound Fluoride Epoxy Butterfly Polymer Polyimide ScanningTunnelingMicroscopy KelvinProbeForceMicroscopy Dr.JurekSadowski atomic_steps FM-KPFM Tin sulfide
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Trench Etch Profile on Si Wafer
Top dielectric trench etch profile on Si wafer having tapered slope at the trench sidewall.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 3μm×3μm
- Scan Rate: 0.21Hz
- Pixel: 1024 × 256
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 3μm×3μm
- Scan Rate: 0.21Hz
- Pixel: 1024 × 256