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3-hexylthiophene Steps 2dMaterials Conduct Holes Spincast PpLdpe frequency_modulation Alkane TransitionMetal WWafer FastScan #Materials SFAs cooling light_emission Oxide optoelectronics cross section CrystalGrowing CalciumHydroxide Wildtype Optoelectronic light_emitting Phenanthrene SoftSample epitaxy Nanostructure OxideLayer dielectric_trench solar_cell Resistance Strontium UnivOfMaryland Fendb
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Semiconductor device, W-plug
Scanning Conditions
- System: NX10
- Scan Mode: Conductive AFM
- Cantilever: ElectriMulti75-G (k=3N/m, f=75kHz)
- Scan Size: 2μm×1μm
- Scan Rate: 0.3Hz
- Pixel: 512×256
- Sample bias: +1V